Semiconductor device

Abstract

Abstract PURPOSE:To enable to operate a redundancy circuit by forming a film having good head transfer rate and high light absorption on at least one of upper surface of a conductor film to be emitted with an energy beam or between the conductor film and an insulating film, thereby readily locally melting the conductor film with the energy beam having less power. CONSTITUTION:Since a polycrystalline silicon film pattern 16 having good heat transfer rate and high light absorption is formed at the fine part 17 of an Al film pattern 18 connected with diffused layers 121, 122 respectively connected to main and spare circuits and between an SiO2 film 132 and film 13, the part 17 of the pattern 18 can be molten merely by emitting the laser beam of a lower power as compared with a conventional device, thereby electrically opening between the layers 121 and 122 to operate a redundancy circuit. Accordingly, the adverse thermal influence to the element around the pattern 18 can be alleviated, with the result that the distance between the pattern 18 and the element can be shortened as compared with the conventional device, thereby enhancing the integration of the element.

Inventors

• 👤 Shigeru Morita
• 👤 茂 森田

Bibliographic Details