Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To uniformly prepare the crystallinity of an element forming region by epitaxially growing an insulating crystalline layer on a substrate and a semiconductor crystalline layer on the insulating layer, forming by etching an insular semiconductor crystalline layer and burying and growing an insulating crystalline layer in the etched and removed region. CONSTITUTION:The first insulating crystalline (EGI) layer 12 is grown in vapor phase on a silicon substrate 11. Then, an n<+> type silicon crystalline layer 13 and an n type silicon crystalline layer 14 are epitaxially grown. Further, a photoresist film mask 15 is formed on the upper surface of the layer 14, and silicon crystalline layers 13, 14 of an interelement isolating region are etched and removed by a plasma etching method. In this case, the EGI layer becomes a blocking layer, and the substrate 11 is not etched. Then, the mask 15 is removed, the second EGI layer 16 is grown in vapor phase, and the interelement isolating region is buried. Subsequently, the layer 16 grown from the layer 14 is polished and removed, a bipolar semiconductor element I3 is formed on the layer 14, windows are opened at an SiO2 film 17, thereby forming base, emitter and collector contacting regions and electrodes B, E, C.

Inventors

• 👤 Rokutaro Ogawa
• 👤 禄太郎 小川

Bibliographic Details