Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To increase the dimensional accuracy and to obtain the excellent taper for the titled semiconductor device by a method wherein the first tapered etching which makes progress in horizontal direction on the surface of the material to be etched and the second tapered etching, which makes progress in vertical direction by increasing the etching speed in the exposed region only, are arranged to make progress simultaneously. CONSTITUTION:A thin phosphur glass layer 4 is formed on the surface of a silicon oxide film 2, and a prescribed pattern is formed using a photoresist 3. After a post baking has been performed, a silicon oxide film 2' of high etching speed is formed by performing an ion implantation. Subsequently, when an etching is started and a tapered etching makes progress in horizontal direction, an etching makes progress in vertical direction makes progress too simultaneously. Said etching makes a two-staged tapered form when it reached a silicon substrate 1. Besides, the amount of deviation in measurements against the pattern measurements of the photoresist is reduced when an over-etching is performed. Subsequently, when the photoresist 3 has been removed and aluminum 5 is vapor- deposited, an excellent step coverage can be obtained in every region.

Inventors

• 👤 Masato Tanaka
• 👤 正人 田中

Bibliographic Details