Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve the masking operation of electrode wirings capable of self- aligniing by implanting oxygen ions to the vicinity of the surface of a high melting point metal film, forming a layer like an amorphous property by reducing the crystalline grain size smaller than the high melting point metal film and with the layer as a mask for implanting the impurity reducing channeling phenomenon of implantaion ions in the grains thus oriented. CONSTITUTION:An interelement isolating Si oxidized film 2 and a gate oxidized film (insulating film) 3 are formed on an Si substrate 1, and a gate electrode film 7 made of high melting metal such as Mo is accumulated on the film 3. Oxygen ions are implanted in the film 7, thereby forming a metal layer 8 containing oxygen in the vicinity of the surface of the film 7. The crystal structure of the metal such as Mo forming the film 7 is damaged by the implantation of the oxygen ions, becoming a structure like amorphous property. Then, the film 7 and the metal layer 8 containing oxygen are simultaneously treated by a photoetching method similarly to the conventional steps, thereby forming a lower layer gate electrode 9 and an upper layer gate electrode 10.

Inventors

• 👤 Shinichi Ofuji
• 👤 大藤　晋一
• 👤 Chisato Hashimoto
• 👤 橋本　千里

Bibliographic Details