Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form an easy inclination arbitrarily to the opening section of a film made of poysilicon, etc. by utilizing the combination of the side etching of an oxide film and the etching in the depth direction of the polysilicon. CONSTITUTION:The first film 3 as the forming member of the semiconductor device is formed onto the surface of a single crystal semiconductor substrate 1 while the film 3 is coated with the second film 4, an etching chemical thereto differs from that to the film 3, a photo-resist film 5 is shaped onto the second film 4, and a pattern is formed to the film 5. The first and second film 3, 4 are etched by alternately using two kinds of the etching chemicals selectively working on the films while employing the film 5 as a mask, and the section of the etching section of the first film 3 is etched obliquely. The combination of polycrystal silicon and a CVDSiO2 film, an Al film and the CVDSiO2 film, and a thermal oxide film and a silicon nitride film can be utilized as the first and second films 3, 4.

Inventors

• 👤 Yorisada Kawakami
• 👤 川上　頼貞
• 👤 Naoyuki Tsuda
• 👤 津田　直行

Bibliographic Details