Semiconductor substrate

Abstract

Abstract PURPOSE:To prevent the breakage of a wire at the stage difference of the window section of an electrode wiring layer by a method wherein the surface of a single crystal semiconductor film formed at the window section of an insulating film is formed with almost flat level to the surface of a single crystal semiconductor film on a peripheral insulating film. CONSTITUTION:Window sections are formed at an SiO2 film 2 formed on the surface of a single crystal semiconductor substrate 1 and an Si3N4 film 3, and a groove section 4 is formed by etching the substrate after using the films 2 and 3 as masks. Next, the films 2 and 3 are used as masks and an insulating film 5 is formed by thermal oxidation so that the insulating film 5 may be almost flat at the surface of the substrate 1 to remove the films 2 and 3. A polycrystalized or amorphous Si film 6 is formed on the surface of the substrate and the film 6 is fused by irradiating heat lines while heating the substrate from the surface of the substrate and the film 6 is recrystallized by a cooling process to form a single crystal semiconductor film 7. This makes the insulating film thick and prevents the breakage of a wire at the level difference of the window section of an electrode wiring layer.

Inventors

• 👤 Seiichi Iwamatsu
• 👤 誠一 岩松

Bibliographic Details