Forming method for semiconductor device electrode

Abstract

Abstract PURPOSE:To obtain an electrode with no danger of destroying the junction face within a substrate and to improve integration by forming a Si layer on the Si substrate surface on which the electrode is to be formed and coating this Si layer with a metal film to obtain a metal silicide. CONSTITUTION:Impurity dope layer 2 is formed by diffusion or ion implantation in the surface region of a semiconductor substrate 1, and SiO2 film 3 is formed by heat oxidation or the CVD method on the surface of this substrate. A contact hole 4 is made with phto etching in such a manner that it correponds to the layer 5 is selectively formed in this hole by the epitaxial growth, and the entire surface including the Si layer 5 is coated with refractory metal film 6 of Mo, Ta, Ti and W, etc. Applying heat treatment of above 500 deg.C causes solid reaction between the layers 6 and 5, thereby forming metal silicide layer 8 which is used as an electrode for the layer 2. This prevents junction 7 from being destroyed since the layer 8 does not penetrate the layer 2. Then, the unsilicified layer 6 is removed and wiring layer 9 being in contact with the layer 8 is bonded to the film 3 while being spread over this film.

Inventors

• 👤 Shiyoujirou Sugashiro
• 👤 菅城　象二郎
• 👤 Masahiko Kogirima
• 👤 小切間　正彦
• 👤 Naoki Yamamoto
• 👤 直樹 山本

Bibliographic Details