Semiconductor integrated circuit device

Abstract

Abstract PURPOSE:To obtain the interlayer insulating film having excellent dampproof property, reliability and patterning property of aluminum wiring layer by a method wherein on a film such as a silica film, for example, a structure on which a silicon oxide film or a phosphosilicate glass film thicker than the above film is grown by performing a vapor-phase growing method or a plasma growing method. CONSTITUTION:The silicon oxide film 8 or a low density PSG film which is thicker than the silicon film is grown in approximately 1mum thickness by performing a vapor-phase growing method. The silicon oxide film formed by a vapor-phase growing method lacks uniformity in its film thickness due to the shape of the underlying layer and the more the stepping becomes larger, the more the nonuniformity of the film thickness is generated, but as a lessening (flattening of a step) of the stepping has been performed by a silica film, the silica oxide film 8 of uniform surface can be grown. As the silica oxide film formed by a vapor-phase growing method lacks density, a control hole is bored by performing a photoresist processing after a heat treatment, an aluminum vapor-deposition is then performed, and an element is formed by patterning the aluminum wiring 9 performing a photoresist processing.

Inventors

• 👤 Hiroshi Ishioka
• 👤 石岡　浩

Bibliographic Details