Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain an accurate sharp electrode wiring pattern through dry etching by an etchant, the principal ingredient thereof is the fluorchlor substitution product of hydrocarbon such as carbon tetrachloride (CF4). CONSTITUTION:The electrode wiring pattern 3, the principal ingredient thereof is Al, is formed through a silicon dioxide (SiO2) film 2 shaped onto an Si substrate 1. A Ti layer 4 in approximately 100nm thickness is shaped onto the whole surface exposed of the substrate through an evaporation method or a sputtering method or the like. The whole is thermally treated for several dozen min in a reducing atmosphere at the temperature of 400 deg.C or 450 deg.C or an inert gas or vacuum, and the thin-layer 5 of an Al-Ti alloy or an intermetallic compound is formed to an interface between the electrode wiring pattern 3 and the Ti alloy or an intermetallic compound is formed to an interface between the electrode wiring pattern 3 and the Ti layer 4. The Ti layer 4 not reacted is removed while using CF4 as the etchant through a barrel type plasma etching method, and the electrode wiring pattern 3, the surface thereof is coated with the Al-Ti thin layer 5, is obtained.

Inventors

• 👤 Minoru Inoue
• 👤 実 井上

Bibliographic Details