Method for detecting growth stripes of semiinsulating gallium arsenide crystals

Abstract

Abstract PURPOSE:To easily detect a form and a state of an interface of solid and liquid in crystals, by etching undoped and low Cr doped semiinsulating GaAs crystals with a first mixed soln. of HNO3, H2O, and HF and then, etching it with a second mixed soln. of AgNO3, CrO3, HF, and H2O. CONSTITUTION:Undoped and low Cr doped semiinsulating GaAs crystals are etched with a first soln. mixture consisting of HNO3, H2O, and HF in the following ratio: NO3:H2O:HF=(2.85-3.15):(3.95-4.05):(0.95-1.05) by volume, and then, it is etched with a second soln. mixture consisting of AgNO3, CrO3, HF, H2O in the following volume ratio: AgNO3:CrO3:HF:H2O=(8-40):(1-5):(1-8): (2-10). As a result, the growth stripes in the crystals can be detected.

Inventors

• 👤 Shintaro Miyazawa
• 👤 宮澤　信太郎
• 👤 Koji Tada
• 👤 多田　紘二

Bibliographic Details