Semiconductor laser

Abstract

Abstract PURPOSE:To obtain a semiconductor laser having no heat distortion or the like generated from the oxidation of a mirror face and a difference in thermal character of a protective film and a laser substrate by a method wherein a high- resistance GaAs single crystal is deposited on the surface becoming the mirror face in a semiconductor laser consisting of a GaAlAs-group material. CONSTITUTION:An N type GaAlAs clad layer 2, a GaAs active layer 3, a P type GaAlAs clad layer 4, and a P type GaAs cap layer 5 are deposited on an N type GaAs substrate 1 by epitaxial growth and a double hetero junction laser substrate 10 is formed. Next, photo etching is applied by using a mixed solution composed of phosphoric acid, hydrogen peroxide and methanol at a ratio of 3:1:1 and a plurality of grooves 11 entering into the substrate 1 from the layer 5 are perforated, then the grooves 11 are used as cleavage faces. After that, high-resistance GaAs is epitaxially grown in the grooves 11 to form protective films 7. The protective films 7 are cleaved from the center lines to split into individual semiconductor lasers. This prevents Aloxidation in GaAlAs by the protective films 7 and also checks heat distortion generated in the substrate 10.

Inventors

• 👤 Takao Yamaguchi
• 👤 山口　隆夫

Bibliographic Details