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JPS5224480A Expired / Lapsed JP ⏱️ 0.0 years remaining

Semiconductor laser

Assignee: Panasonic Holdings Corp
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Filing: 1975-08-20
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Granted: —
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Expires: 1995-08-20
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Abstract

Abstract PURPOSE: Increase reflection index and reduce Jth by forming a semiconductive layer whose forbidden band width is larger than that of active region and which has a large refraction index at one edge of semiconductive active region. COPYRIGHT: (C)1977,JPO&Japio

Inventors

  • 👤 Kunio Ito
  • 👤 Masaru Kazumura

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-07 08:00
CPC Classifications
—

Claims Analysis

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References Cited (Backward Citations)

JPS4866980A Cited

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