Semiconductor device

Abstract

Abstract PURPOSE:To reduce the parasitic capacity of a semiconductor device by notching the surface of a metallic base at the parts opposed to the gate and drain electrodes of a semiconductor substrate. CONSTITUTION:The surface of a grounding metallic base 5 is notched at the parts opposed to gate and drain electrodes 3, 4 of a semiconductor substrate 100, thereby expanding a gap 53. Accordingly, the parasitic capacity can be reduced, thereby improving the high frequency characteristics. Excessive solder is absorbed to the notch 53, thereby preventing a shortcircuit with the gate electrode 3. A notch may be formed on the surface of the metallic base opposed to the source electrode 2 according to the disposition of the FET pattern.

Inventors

• 👤 Yoshinobu Kadowaki
• 👤 門脇　好伸

Bibliographic Details