Method and device for formation of film by sputtering

Abstract

Abstract PURPOSE:To make the distributions of deposited film thicknesses uniform by flowing electric currents of prescribed periods to electromagnets, and changing the magnetic induction forces energized in the inside and outside electromagnet coils thereby changing the diameter of plasma rings. CONSTITUTION:A packing plate 22 to serve as the cathode is provided to a target flat plate 21, and a yoke 23 which generates prescribed magnetic flux distributions in the hollow space 29 over the 1st plane of the plate 21, inside, outside electromagnet coils 24, 25, a central magnetic pole terminal 26, inside, outside magnetic pole terminals 27, 28, an electrode support 30, and an O-ring 31 are provided. A shield 32 to serve as the anode is provided via an insulation spacer. When sputtering is effected by applying a high voltage power source, plasma rings are generated in the space 29 over the plate 21. If the difference in the magnetic induction forces to be applied upon the coils 24, 25 is decreased to decrease the diameter of the plasma rings, the thickness distributions of the formed films of a curve 62 are obtained. If the difference is increased, a curve 61 is obtained, and the synthetic films of a curve 63 are distributed on a substrate 20 to be formed with films, whereby the uniform thickness of the formed films is obtained.

Inventors

• 👤 Hide Kobayashi
• 👤 秀 小林
• 👤 Katsuo Abe
• 👤 勝男 阿部
• 👤 Tsuneaki Kamei
• 👤 亀井　常彰
• 👤 Hideki Tateishi
• 👤 秀樹 立石
• 👤 Susumu Aiuchi
• 👤 進 相内

Bibliographic Details