Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain a glass coating having the high dampproof property for a semiconductor device by a method wherein the film consisting of silicate glass is selectively treated with heat by irradiation of an energy beam, and selective etching is performed according to the difference of etching speed to be generated by hydrofluoric acid to form a pattern. CONSTITUTION:The PSG film 2 is made to grow on a substrate 1 according to the CVD method holding at the thermal decomposition temperature of 425 deg.C, a metal mask 3 having the prescribed openings is put thereon, and the film 2 is irradiated to perform the selective heat treatment using continuous wave CO2 gas laser of about 3mm. luminous flux diameter making the scanning speed at about 0.4cm/sec. The etching speed to be performed using hydrofluoric acid at the part treated with heat is made slower than the part not treated with heat by this way, the mask 3 is removed, etching is performed on the whole surface using the etching liquid of H2O:HF=39:1, and the part not treated with heat being covered with the mask 3 is removed. Accordingly the resist treatment is unnecessitated, and the progress of work is shortened, while cleanness is enhanced.

Inventors

• 👤 Shuichi Ohashi
• 👤 修一 大橋

Bibliographic Details