Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent the decrease in the characteristics of a semiconductor device due to an isolation between semiconductor elements by forming an insulating film on the entire U-shaped groove formed by etching on one conductive type semiconductor substrate, and implanting one conductive type impurity only to the bottom of the groove. CONSTITUTION:An n<+> type buried diffused region 15 is diffused in a p type semiconductor substrate 14, an n type epitaxial layer 16 is grown, an SiO2 film 17 and an Si3N4 film 18 are deposited, the films 17, 18 of the region to be ion implanted are removed, a U-shaped groove 19 is formed by reactive ion etching, an oxidized film 20 is formed on the overall surface of the periphery of the groove, boron ions are implanted vertically in the bottom of the recess to form an impurity region 21, and the groove is thereafter buried flatly with polycrystalline silicon or the like. In this manner, parasitic capacity can be reduced, thereby accelerating the switcing speed.

Inventors

• 👤 Yoshinobu Monma
• 👤 門馬　義信
• 👤 Toshihiko Fukuyama
• 👤 福山　敏彦

Bibliographic Details