Plasma etching treatment

Abstract

Abstract PURPOSE:To obtain a high-precision, high-density wiring by making the residual activated substances inactive by introducing a reaction gas after plasma etching. CONSTITUTION:When Al3 is evaporated on SiO2 substrate through high-frequency heating and treated with a resist mask 4, then plasma etching is carried out using a gas containing Cl, a space 5 is created under the mask 4. As a result, a residual product such as Cl2XAlCl3 is left after etching. This product is changed to less active NH4Cl and Al by introducing H2 together with NH3 or an amine then giving a plasma discharge. With this constitution, corrosion of Al can be prevented and a high-precision, high-density wiring is made possible.

Inventors

• 👤 Atsuo Nishikawa
• 👤 西川　敦夫

Bibliographic Details