Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To stabilize a coated pattern of a semiconductor device by patterning a film coated on a semiconductor substrate in a gas plasma containing chlorine where the film contains aluminum or mainly aluminum as essential ingredient and irradiating the gas plasma containing F in an apparatus. CONSTITUTION:A semiconductor substrate 6 formed with a wiring Al-Cu alloy (containing 4% of copper) film is contained in a reaction container, BCl3 gas is introduced thereinto, high frequency wave is applied, and a gas plasma contaning chlorine is generated. The alloy is etched in a predetermined pattern, CF4 is introduced into an apparatus consectively, high frequency wave is applied, and gas plasma containing F is exposed with the substrate to be treated. Even if it is thus exposed with atmospheric air, the Al-Cu wiring pattern is not corroded, but reliable and stable wiring electrode can be finely formed.

Inventors

• 👤 Moritaka Nakamura
• 👤 Chuichi Takada

Bibliographic Details