Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve the characteristics of a semiconductor device by removing an Si3N4 film on an interelement isolating zone region with a thermal H3PO4 without roughing the surface of a lower Si substrate. CONSTITUTION:A dioxidized silicon film 22, an antioxidative film 23 and a dioxidized silicon film 24 of the prescribed pattern are respectively laminated on an interelement isolating zone forming region C and an element forming region A on a semiconductor substrate 21. Then, a photoresist film 25 is formed, a window is opened at the film 25 on the region C, and with the film as a mask the film 24 on the region C is removed. Then, nitrided silicon films 23 on the regions C and A as masks the first field oxidation 26 is performed. Then, a photoresist film 27 opened with a window only on the region C is formed, and with the film as a mask the film 23 on the region C is removed, and an isolating band forming impurity is introduced to the region C. Thereafter, the second field oxidized film 28 is formed.

Inventors

• 👤 Tadashi Kirisako
• 👤 桐迫　正

Bibliographic Details