JPS51146186A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Diode device fabrication method
Assignee: Hitachi Ltd
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Filing: 1975-06-11
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Granted: —
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Expires: 1995-06-11
Abstract
Abstract PURPOSE: A diode device fabrication method, that prevents short circuit between an emitter and a corrector of an iso-planer type transistor and furthermore prevents base sphere from being thin and protects anti-pressure to reduce. COPYRIGHT: (C)1976,JPO&Japio
Inventors
- 👤 Hisayuki Higuchi
- 👤 Keijiro Uehara
- 👤 Yoichi Tamaoki
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-07 13:18
CPC Classifications
—
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