Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain a substrate suitable for use in a high speed device by a method wherein an insulating film is attached to a single crystal substrate to be provided with some openings, the entire surface is then covered with an amorphous semiconductor film, a laser beam is used to monocrystallize the amorphous semiconductor in an opening, which acts as a seed in a following process of monocrystallizing the entire amorphous semiconductor film, which them is selectively removed. CONSTITUTION:A single crystal Si substrate 1 is coated with an SiO2 film 2, wherein a plurality of openings 3 are provided, then is covered with a thin SiO2 film 4 with an exception of one opening 3 remaining exposed. Next, the entire surface is deposited with a polycrystalline Si film 5, whereinto Si ions 6 are implanted for the creation of defects within for an effective absorption of energy in a later process. A laser beam 7 is then applied to an opening 3 wherein the substrate acts as a seed whereby the film 5 under the beam is developed into a single crystal film 5a which in turn acts as a seed for the transformation of the entire film 5 into a single crystal film 5b under the travelling laser beam 7. Except some prescribed regions, the film thus monocrystallized is dismantled.

Inventors

• 👤 Hiroyuki Tango
• 👤 丹呉　浩侑
• 👤 Yoshihisa Mizutani
• 👤 水谷　嘉久

Bibliographic Details