Optical coupling device

Abstract

Abstract PURPOSE:To obtain the titled optical coupling device of high degree of optical coupling as well as to increase the productivity of the device by a method wherein an N type layer and a P type layer are epitaxially grown in laminated form on the main surface of a semiconductor substrate through the intermediary of a hetero junction layer, a groove is provided on the grow layer and a light- emitting element and a light-receiving element are formed in such a manner that they are facing each other. CONSTITUTION:N type layers 16, 18, 21 and 23, whereon Sn or Te is doped, and Ge-doped P type layers 17 and 22 are grown in laminated form on the AlGaAs ternary mixed crystal semiconductor material located on the main surface of a substrate consisting of GaAs semiconductor, and P-N hetero junction layers 6 and 7 are formed. Then, after reflection type electrode layers 19 and 24 have been formed, a proove having the prescribed width is formed by performing a discharge processing and the like, and alight-emitting element 2 and a light-receiving element 3 are formed facing each other. Subsequently, a processing is performed on a reflection type electrode layer 19, an N type layer 23 and a reflection type electrode layer 24, and electrode layers 20, 25 and 26 are formed.

Inventors

• 👤 Masahiro Nonaka
• 👤 野中　正煕
• 👤 Fumihiko Sato
• 👤 文彦 佐藤

Bibliographic Details