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JPS582082A Expired / Lapsed JP ⏱️ 0.0 years remaining

Josephson junction device

Assignee: NEC Corp
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Filing: 1981-06-29
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Granted: —
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Expires: 2001-06-29
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Abstract

Abstract PURPOSE:To reduce deterioration to be generated by a heat cycle and by variation per hour, and to improve reproducibility and uniformity of the current- voltage characteristic of a Josephson junction device by a method wherein a silicon nitride is used for a barrier and insulating layers of the Josephson junction device. CONSTITUTION:The Josephson junction device is formed of the first superconductor 11, the second superconductor 12, the barrier 13 to generate the superconducting tunnel effect interposing between them, and the insulating layers 14 to insulate the conductor 11 and the conductor 12. At this time, the barrier 13 and the layers 14 are formed of the silicon nitride together. 1-7mm. is proper for thickness of the barrier 13, and several ten mm. or more is proper for thickness of the layers 14. Accordingly deterioration to be generated by a heat cycle and variation per hour is reduced, and reproducibility and uniformity of the current- voltage characteristic is improved.

Inventors

  • 👤 Yoshifusa Wada
  • 👤 和田 容房

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-06 14:02
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/10; H10N60/12

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