Diffusion layer creation process control method

Abstract

Abstract PURPOSE:To improve uniformity in characteristics of elements, by detecting the deviation values of impurity density of a substrate and gate configurations from objective values, adjusting a profile based on the values, thereby reducing the amount of fluctuation in electric characteristics. CONSTITUTION:The sheet resistance value of a substrate is measured by a resistor measuring device 201 in a substrate checking process 301. A CPU 207 receives the value and computes inpurity density Na of the substrate. Then, an oxide film is formed at a first oxidizing process 302, and a gate width (w) is measured by a size measuring device 202. The CPU 207 receives the value. Then, an oxide film is formed at a second oxidizing process 303, and a gate oxide film thickness (d) is measured by a film thickness measuring device 203. The CPU receives the value. Then, after a P type surface inverted layer is formed, the oxide films on a source and a drain are removed at an etching process 304. A length l of a gate oxide film is measured by a size measuring device 204. The CPU receives the value. Then impurities are implanted in the source and the drain at an ion implanting process 305.

Inventors

• 👤 Yoichi Takeuchi
• 👤 洋一 竹内
• 👤 Mikihiko Onari
• 👤 大成　幹彦
• 👤 Kuniaki Matsumoto
• 👤 松本　邦顕
• 👤 Ikuo Matsuba
• 👤 松葉　育雄
• 👤 Masaru Takeuchi
• 👤 竹内　賢
• 👤 「ふな」橋　誠壽
• 👤 Seijiyu Funabashi

Bibliographic Details