Semiconductor device

Abstract

Abstract PURPOSE:To make it possible to form electrodes without area loss and without current leakage from a shallow junction, by depositing a silicon layer or a metal silicide layer on the internal surface of an electrode opening part, depositing a metal film only on said layer, and providing an aluminum wiring layer in contact with said metal film. CONSTITUTION:A thick silicon dioxide film 3 is formed on a silicon substrate 1, and a resist pattern is formed. A dopant is doped and a junction region 2 is formed. Then a polycrystal silicon layer 6 is deposited thereon by using SiH4. A photoresist film 7 is formed on the film 6. Etching is performed until the polycrystal silicon remains at only the opening part of the silicon dioxide by using argon gas. Then the same dopant as the junction region 2 is doped on the polycrysltal silicon layer 6. Tungsten 9 is selectively deposited only on the polycrystal silicon 8. Aluminum is evaporated thereon, and etching is performed by CCl4-Cl2 gas with the resist film as a mask. After a wiring layer 4 is formed, the resist film is removed, and an oxide film 10 is formed and made to a protecting film.

Inventors

• 👤 Mitsutoshi Furuyama
• 👤 古山　充利
• 👤 Takahiko Moriya
• 👤 守屋　孝彦

Bibliographic Details