Manufacture of capacitor

Abstract

Abstract PURPOSE:To obtain a large-capacity capacitor, by a method wherein Al of low resistance is used as electrodes, and Al2O3 layer with a large dielectric constant is used as an insulating layer. CONSTITUTION:An Si substrate 1 is thermally oxidized to form an oxide film, which is then patterned into a predetermined shape. Then, an Al layer 3, a first layer, is deposited thereon by evaporation and then subjeted to a positive oxidization in order to convert only the surface layer of the layer 3 into an Al2O3 layer 4. Then, a second Al layer 5 is deposited thereon by evaporation spreading over the layer 2 at its end, and the whole surface thereof is covered with an interlayer insulating film 6, and Al electrodes 7 are fixed to the Al layer 3, the first layer, and the Al layer 5, the second layer, respectively. Thus, alumina, 8-10 in dielectric constant larger than 3.5-4 of the oxide film is used for the insulating layer. Al of resistance lower than polycrystalline S is used for the electrodes to make the capacitor larger in capacity.

Inventors

• 👤 Toshihiko Mano
• 👤 真野　敏彦

Bibliographic Details