Semiconductor laser having embedded heterogeneous structure

Abstract

Abstract PURPOSE:To improve resproducibility of crystal growth and to improve a manufacuturing yield rate of BH-LD, by forming a groove which is held between two narrow mesa stripes so as to pierce through a second conductive semiconductor layer, and embedding an active layer in said groove part. CONSTITUTION:The two very narrow mesa stripes 251 and 252 having a thickness of 2mum are provided in advance. An An0.72Ga0.28As0.61P0.39 active layer 205 is grown in the part of the V groove 253 held between the two stripes 251 and 252. Owing to the property of the crystal growth characterized by the fact that the active layer is not laminated on the upper surface of a mesa, the active layer is embedded in a split form in the V groove 253 and is not grown continuously.

Inventors

• 👤 Mitsuhiro Kitamura
• 👤 北村　光弘

Bibliographic Details