Semiconductor integrated circuit

Abstract

Abstract PURPOSE:To prevent the soft error generating from the incidented radioactive rays by a method wherein the impurities, having the conductivity different from that of the three regions below-mentioned, of 10<17>-10<19>cm<-3> or thereabout in density is ion-implanted at the lower part of the region on a substrate whereon an FET will be formed in such a manner that the drain, channel and source regions of the FET will be surrounded. CONSTITUTION:The numbers 14, 24 and 15, 28 in the diagram indicate the drain and source regions which were formed making contact with the drain and source electrodes of the FET respectively, and 16 and 26 indicate the channel regions which were formed making contact with the gate electrode. Also, 17 and 27 are the regions having different conductivity from that of the above-mentioned three regions which were formed surrounding the drain, channel and source regions of the FET. To be more precise, p type regions 17 and 27 of high density (10<17>- 10<19>cm<-3>) are formed in such a manner that they are surrounding the active region of the FET, the electron which was diffused from the substrate is recoupled in the p type region before it reaches the n type active region, thereby enabling to prevent the electron from being injected into the active region.

Inventors

• 👤 Satoshi Takano
• 👤 高野　聰

Bibliographic Details