Manufacture of josephson integrated circuit

Abstract

Abstract PURPOSE:To enhance the reproducibility of Josephson junction characteristics without causing irregularity in the thickness and composition of a tunnel barrier produced during the manufacturing steps by holding the surface state of the lower electrode constant. CONSTITUTION:A ground plane 2 is formed by Nb on a substrate 1, an oxidized film 3 of SiO is formed, and an overhang 10a is formed at a resistor pattern 10. Pb-In-Au alloy is laminated and deposited as a lower electrode 4. The electrode 4 is oxidized to form a tunnel barrier 6, Au is deposited to form a protective film 11. The pattern 10 is removed, and a resist pattern 12 for deciding a Josephson junction is formed. SiO is deposited, the pattern 12 is removed, an insulating film 5 is formed, a resist pattern 13 is further coated, Pb is deposited, and an upper electrode 7 is formed. The film 8 of the SiO is formed, and a control line 9 is then formed.

Inventors

• 👤 Hikosuke Shibayama
• 👤 芝山　彦右

Bibliographic Details