High mobility complementary semiconductor device

Abstract

Abstract PURPOSE:To obtain a high mobility complementary semiconductor device by composing a high electron mobility transistor and a high hole mobility transistor having holes of P type conductive medium as conductive medium, formed on the same substrate. CONSTITUTION:A buffer layer 2 and a channel layer 3 are formed on a semi- insulating arsenided gallium (GaAs) substrate 1, and transistors are divided via grooves 4. An electron supplying layer 5 made of aluminum arsenided gallium (AlGaAs) containing n type impurity such as silicon (Si) and a hole supplying layer 6 made of aluminum arsenided gallium (AlGaAs) containing P type impurity such as zinc (Zn) are formed. An auxiliary layer 7 made of arsenided gallium (GaAs) containing N type impurity accelerates the accumulation of 2-element electron gas 9, and an auxiliary layer 7' made of P type arsenided gallium (GaAs) accelerates the accumulation of 2-element hole gas 9.

Inventors

• 👤 Takashi Mimura
• 👤 高志 三村

Bibliographic Details