Ladder-shaped lower alkyl polysilsesquioxane with ability to form heat-resistant thin films

Abstract

Abstract PURPOSE:To prepare the titled polysilsesquioxane capable of forming a heat- resistant thin film and suitable for the insulation protecting film and the interlayer insulating film for integrated circuit, by using a specific ladder-like lower alkylpolysilsesquioxane having a relatively low molecular weight as a component. CONSTITUTION:The ladder-like lower alkylpolysilsesquioxane of formula (R and R' are lower alkyl; n is average polymerization degree). 15-30wt% of the polymer has a molecular weight of <=20,000 in terms of standard polystyrene determined by gel permeation chromatography. For example, the ladder-like methyl polysilsesquioxane can be prepared by dissolving trichloromethylsilane in ketone, etc., adding water to the solution to hydrolyze the trichloromethylsilane, condensing the hydrolyzate, and if necessary, adjusting the molecular weight distribution of the resultant condensation product.

Inventors

• 👤 Ikuo Nozue
• 👤 野末　幾男
• 👤 Nagahiko Tomomitsu
• 👤 友光　長彦
• 👤 Takashi Ukaji
• 👤 孝志 宇加地
• 👤 Yoshio Matsumura
• 👤 松村　喜雄
• 👤 Taro Suminoe
• 👤 住江　太郎

Bibliographic Details