Etching method for surface protective film

Abstract

Abstract PURPOSE:To prevent the etching of the side surfaces of the surface protective film, and to improve accuracy by selectively coating the surface protective film with a resist film, injecting ions and increasing the speed of etching of an exposed section. CONSTITUTION:The surface protective film 4 of the two layers of PSG 41 and SiO2 42 is coated with the resist film 5 according to a predetermined pattern, and P in approximately 5-7X10<15>cm<-2> at 180kev is injected. The film 4 is etched through a conventional method and an opening is formed, and a mask 5 is removed. The difference of the speed of etching of the PSG 41 and the SiO2 42 is reduced through P ion injection in the exposed section of the film 4, the PSG 41 is not etched excessively and the accuracy of etching is improved. The surface protective film 4 may be a single layer, and the same effect is also obtained through the injection of P or B when SiO2 is not added.

Inventors

• 👤 Kazuaki Miyata
• 👤 和明 宮田

Bibliographic Details