Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form an inter-element isolating layer with precision and in a short period of time by a method wherein ions are implanted into a region lacking a mask and the ion-implanted layer is thermally oxidized into an inter-element isolating layer. CONSTITUTION:A photoresist layer 4, Si nitride layer 3, thermally oxidized layer 2 serve as a mask for the formation of an ion-implanted layer 17 in a region 6 exposed in a substrate 1. The photoresist layer 4 is removed, and oxidation is performed for the Si substrate 1 with the Si nitride layer 3 serving as a mask for the formation of an inter-element isolating Si oxide layer 18 in the regions other than the regions immediately below the Si nitride layer 3. The Si nitride layer 3 and the thermally oxidized layer 2 are lastly removed with the inter- element isolating Si oxide layer 18 positioned on the Si substrate 1.

Inventors

• 👤 Takashi Hosaka
• 👤 俊 保坂

Bibliographic Details