Forming method for minute pattern

Abstract

Abstract PURPOSE:To form the minute pattern easily by shaping a section to be removed through etching by a positive resist pattern picture and coating the exposed section of the quality of a residual material with a negative resist picture. CONSTITUTION:A positive resist 2 is applied onto the quality of the material to be etched 5 of a substrate 1. An exposure process is conducted by using a mask 3. The resist pattern pictures 4 are obtained through development. The negative resist 6 is further applied onto the pictures 4. The pictures 4 are aligned by using the mask 3 or a mask, which is similar to the mask 3 and is slightly smaller than the mask 3, and the resist 6 is exposed. The negative resist pictures 7 and the pictures 4 are made exist in mixed form through development. The pictures 4 are dissolved and removed during negative development or thereafter by selecting a proper solvent, and the pictures 7 are left. The section of the quality of the material 5 is etched, and the predetermined pattern 5a is obtained. The substrate 1 on which the pattern as an object is shaped completely is acquired by removing and washing the pictures 7. Accordingly, the merits of both positive and negative types can be utilized.

Inventors

• 👤 Takao Kagii
• 👤 鍵井　孝夫

Bibliographic Details