Semiconductor device

Abstract

Abstract PURPOSE:To prevent invasion of light from a photo detecting part to active regions forming a semiconductor element by a method wherein injected light being reflected in multiple manner in a transparent insulating material is intercepted by an opaque substance. CONSTITUTION:Injected light to the photo detecting part A formed in a silicon substrate 1 is reflected on the surface of the said silicon substrate 1 through the oxide film 2, while obliquely injected light is reflected complicatedly in the said oxide film 2, and proceeds toward the circumferential circuits B. A groove is formed as to reach the silicon substrate 1 in the oxide film 2 as to surround the photo detecting part A, and the Al electrode material 4 is covered thereon. Accordingly light does not reach the P-N junction parts 3 formed in the circumferential circuits, and junction leakage in the surface or in the inside is not generated completely. Moreover as the electrode material, in addition to Al, Au Mo, polycrystalline silicon, etc., is favorable so far as it is an opaque substance.

Inventors

• 👤 Toshio Kano
• 👤 蚊野　利雄

Bibliographic Details