Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To treat a glass layer containing an impurity thermally in an oxygen atmosphere, and to obtain an oxide positively through treatment in a short time by applying a liquid, which is acquired by melting a gas material containing the impurity into an organic solvent, onto a semiconductor substrate and forming the glass layer. CONSTITUTION:A silicon dioxide film 2 grown in the thickness of approximately 4,000Angstrom is formed onto the silicon semiconductor substrate 1, and a window is bored in order to shape an impurity diffusion layer. The liquid obtained by melting the glass material containing the impurity into the organic solvent is applied onto the substrate 1, and the silica glass film 3 containing the impurity is formed. A wafer 13 to which the glass film 3 is shaped is placed onto a base 12 made of graphite in a heat-treating vessel 11, and O2 gas is passed through water 15 brought to a predetermined temperature by means of a heater 14 and supplied to the vessel 11 as steam. The glass film 3 of the wafer 13 is exposed to wet oxygen O2 having prescribed temperature and thermally treated in the vessel 11, and the impurity diffusion layer 4 is formed positively in a short time.

Inventors

• 👤 Toshihiko Fukuyama
• 👤 福山　敏彦
• 👤 Yoshinobu Monma
• 👤 門馬　義信

Bibliographic Details