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JPS58103147A Expired / Lapsed JP ⏱️ 0.0 years remaining

Semiconductor device

Assignee: NEC Corp
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Filing: 1981-12-15
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Granted: —
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Expires: 2001-12-15
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Abstract

Abstract PURPOSE:To obtain the semiconductor device provided with bonding pads having conductivity not to be damaged due to moisture, etc., and having high reliability by a method wherein the circumference of the bonding pad is surrounded with an aluminum electrode, and the lowest electric potential to be used is applied thereto. CONSTITUTION:The aluminum electrode film 6 is formed at the circumference of an outside wiring 5, and moreover the aluminum electrode film 6 thereof is held at the lowest electric potential to be used. At bonding constituted by this way, the bonding pad 3a is held at positive electric potential in relation to the circumferential aluminum electrode 6, and when the device is in actual using condition, anodic oxidation is advanced to aluminum of the bonding pad part 3a, and the surface of aluminum is converted into aluminum oxide. Accordingly, corrosion of the bonding pad part 3a is stopped when the surface is converted into aluminum oxide, while corrosion and dissolution are advanced to the aluminum electrode 6. Accordingly corrosion of the bonding pad part 3a can be prevented.

Inventors

  • 👤 Takashi Yamazaki
  • 👤 山崎 孝志

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-08 22:24
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/90; H10W72/071; H10W72/075; H10W72/07551; H10W72/50; H10W72/531; H10W72/536; H10W72/59; H10W72/921; H10W72/923; H10W72/931; H10W72/932; H10W72/951; H10W72/952; H10W72/981; H10W72/983

Claims Analysis

Total Claims: 0
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