Cleaning of wafer

Abstract

Abstract PURPOSE:To obtain the cleaning method having oxidizing action not to change per time by a method wherein the silicon wafers to be processed are immersed in hydrochloric acid made to bubble with vapor containing ozone. CONSTITUTION:A flat conduit 3 arranged with small holes to discharge oxygen (O2) containing ozone (O3) as the air bubbles equally on the whole bottom is provided on the bottom of a cleaning tank 1 manufactured of quartz glass, and is connected to an ozone generator 5 by a conduit 4. The wafers 7 to be processed and supported by a holder 6 manufactured of quartz glass are put on the flat conduit 3. As for the ozone generator 5, the device to be used usually making high-frequency electromagnetic field, ultraviolet rays, X-ray irradiation, etc., as the reaction means is used.

Inventors

• 👤 Tadayoshi Yoda
• 👤 誉田　忠義
• 👤 Mamoru Maeda
• 👤 守 前田
• 👤 Mikio Takagi
• 👤 幹夫 高木

Bibliographic Details