Patent JPS5797645A successfully refreshed from Google Patents.
JPS5797645A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Forming of multi-layer wiring
Assignee: Hitachi Ltd
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Filing: 1980-12-10
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Granted: —
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Expires: 2000-12-10
Abstract
Abstract PURPOSE:To simplify a process greatly by performing the constructing of through-the-hole and the wiring of the first layer in one hot resist process. CONSTITUTION:A SiO2 film 2, the first Al wiring layer 3 and a resist pattern 4 are formed on a Si substrate 1. Then the wiring layer 3 is anodized to make Al2O35. The resist 4 in the thin part of the film is removed. The second anodization is performed to convert the surface of the wiring layer 3 to Al2O55. The resist 4 in the thicker part of the film is removed. Then the wiring 6 of the second layer is formed by the hot etching technique.
Inventors
- 👤 Hiroshi Umezaki
- 👤 Norikazu Tsumita
- 👤 Ken Sugita
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-04 20:05
CPC Classifications
—
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