Semiconductor non-volatile memory

Abstract

Abstract PURPOSE:To write/erase a semiconductor non-volatile memory at a low voltage by tunnel injection from the drain of a memory transistor to a floating gate and injecting hot carrier produced by breakdown at a drain junction. CONSTITUTION:In case of writing/erasing, a voltage V1 applied to the first layer becomes a value obtained by dividing a voltage VG applied between a control gate 6 and a drain 4 by capacity ratio, representing V1=[C2/(C1+C2)]X VGD; where C represents the capacity between a floating gate 5 and a drain 4, C1 represents a capacity between a floating gate 6 and the gate 5. Accordingly, to increase a voltage applied to the first layer with the VGD maintained constantly, the rate of C2 is increased, and the superposing area of the gates 5, 6 is increased. Thus, the voltage is concentrated to the first layer, thereby enabling the writing/erasing at a low voltage.

Inventors

• 👤 Shinpei Tsuchiya

Bibliographic Details