Semiconductor device

Abstract

Abstract PURPOSE:To make an equal breakdown current to flow and to prevent generation of deterioration of junction of a semiconductor device when a surge input is applied by a method wherein the whole circumference of the drain region of an MOS transistor being connected with an input is surrounded with a gate electrode. CONSTITUTION:The drain region 104 of the MOS transistor being connected with the input is surrounded completely with the gate electrode 107 of the transistor, and is separated from the end of a field oxide film. Accordingly the parameters to decide the drain withstand voltage are equal, and because no contact with the channel stopper is exist extending over the whole circumference of the drain region to hold the withstand voltage to be conatant, the equal breakdown current can be obtained when the surge input is applied.

Inventors

• 👤 Taiichi Inoue

Bibliographic Details