Charge transfer element

Abstract

Abstract PURPOSE: To enlarge the maximum charge quantity of a charge transfer element being able to flow in by a method wherein an impurity region of high concentration is provided along the junction boundary region between an impurity region and a semiconductor substrate. CONSTITUTION: n Type diffusion regions 12a, 12b are formed in the semiconductor substrate 1, and a transfer electrode 4 is formed interposing an insulating film 3 between them. In the n type diffusion region, impurity concentration of the region in the n type region 12b at the circumferential part close to the junction boundary region is made as higher than that of the n type region 12a at the center part. It is desirable to make the n type region 12b to have higher concentration by about 1.5∼3 times as compared with the n type region 12a. COPYRIGHT: (C)1982,JPO&Japio

Inventors

• 👤 Yasuaki Terui

Bibliographic Details