Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enable to obtain a semiconductor substrate having few generation of defect improving the element isolation technique by a method wherein a material layer having high oxidation speed provided on the semiconductor substrate interposing an oxide film and an accumulated body of Si3N4 between them is oxidized selectively, and a part of the remaining material layer is removed. CONSTITUTION:After the SiO2 film 2, the Si3N4 film 3 and the polycrystalline Si layer 4 are accumulated in order on the Si substrate 1, selective etching is performed utilizing an Si nitride pattern to form thick silicon oxide films 7, a part of the remained polycrystalline Si layer is removed, and still remaining Si layers 4' are oxidized again. Accordingly controllng of finishing point of oxidation is unnecessitated, and because influence to the substrate is reduced, generation of stress is prevented, and moreover formation of element in minute type can be attained.

Inventors

• 👤 Junichi Matsunaga
• 👤 Hiroshi Nozawa
• 👤 Hisahiro Matsukawa

Bibliographic Details