Semiconductor device and its manufacture

Abstract

Abstract PURPOSE:To form a plurality of contact holes accurately in the same process by approximately uniformalizing the thickness of an insulating layer to which the contact holes for forming electrode extracting wiring are bored. CONSTITUTION:A MOSFET consisting of a source 22, a drain 23, a gate oxide film 24 and a gate electrode 25 is made up in one region of a P type semiconductor substrate 20 partitioned by a separating layer 21 among elements. A conductor layer 26 for extracting an electrode and a wiring layer 27, thickness thereof are equal approximately, are built up on the separating layer 21. A source 28 constituting another MOSFET is formed in another region. The first insulating layer 29 is made up on these whole surface. An extracting electrode 30, one end thereof is connected to the source 22 and the other end thereof is connected to the conductor layer 26 for extracting the electrode, is built up, and the second insulating layer 31 is formed on the whole surface. The contact holes 33, 34, 35 are made up by means of the same photo-etching process and etching process.

Inventors

• 👤 Shiyouji Ariizumi
• 👤 Makoto Segawa

Bibliographic Details