Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a highly integrated semiconductor device wherein many insulators and semiconductors are layered by forming polycrystal Si or amorphous Si on an insulating film formed on a substrate, and crystallizing said Si by laser annealing. CONSTITUTION:The surface of a polycrystal Si substrate 1 is thermally oxidized and an SiO2 film 2 is formed. Then, amorphous Si is deposited on the SiO2 film 2, and single crystal is obtained by applying laser annealing on a specified part. Thereafter, the amorphous part 1 is converted into an oxide film by thermal oxidization, and the most of the single-crystallized part is formed as a single crystal Si region 3'. In this method, the insulating films and the laser-annealed and single-crystallized semiconductor films are alternately layered, a semiconductor element is formed on said semiconductor film, and the highly integrated semiconductor device can be formed.

Inventors

• 👤 Kunihiko Wada
• 👤 Hajime Kamioka
• 👤 Nobuo Sasaki

Bibliographic Details