Mos type circuit

Abstract

Abstract PURPOSE:To decrease the power consumption at stand-by, by providing an MOSFET between a gate common connecting point of a complementary MOS inverter and input and power supply terminals. CONSTITUTION:The drain of a P channel MOSFETT3 and the drain of an N channel MOSFETT4 are connected to an input terminal 11 of a C-MOS inverter, and the source of the MOSFETT4 is grounded. The gates of the both FETs are connected in common, and a signal of L level is applied at the use of the C-MOS inverter and a signal of H level is applied at stand-by. At stand-by, the FETT3 is nonconductive and the T4 is conductive, and a signal applied to a terminal 13 is not delivered to the input terminal 11 of the C-MOS inverter. In this case, since the terminal 11 is held at L level, an FETT1 is nonconductive and a current flowing to the both FETs does not flow to the C-MOS inverter.

Inventors

• 👤 Katsuhiko Sato

Bibliographic Details