Preparation of semiconductor device

Abstract

Abstract PURPOSE:To make clear the detection of a signal for a mark for positional alignment by electron beam scanning and to conduct thereby the positional alignment with high precision by removing the part of aligned position of an insulator film of a substrate before application of an electron-beam resist. CONSTITUTION:An opening 14 is made in SiO2 12 on a p-type Si substrate 11 and the mark 15 for aligning the position is made by etching. The film 12 being removed, a field oxidized film 16 and FET are provided by using the mark 15 by a conventional method and later are covered with PSG21. Then, a mask is prepared by applying an electron-beam resist PMMA 22a and conducting drawing and development thereon. By using this maks, the PSG21 is opened by plasma etching and subjected to high-temperature treatment in N2 and is thereby deformed. Then, a PMMA 22b is applied afresh, an electrode window is drawn and developed by using the mark 15 for aligning the position, the window is made in the PSG21 by the plasma etching, and an Al wiring 22 is attached thereto. Since the PSG in the part of the mark 15 for pigning the position is removed, the SN ratio of a position detection signal at the time of the electron-beam scanning is not deteriorated and there is no decline in the precision of overlapping of patterns.

Inventors

• 👤 Masaki Sato
• 👤 Katsuhiro Kawabuchi

Bibliographic Details