Fabrication of wiring structure

Abstract

Abstract PURPOSE:To prevent the deterioration of passivation effect and increase of floating capacitance by a method wherein a contact hole forming area part is formed so that it is thiner than in other area and after an insulating layer of a fast-etching speed has been formed other insulating layers are formed. CONSTITUTION:Whole surface of a substrate 1 is covered by SiO2 layer P. Part of SiO2 layer 2 is mad thinner by etching, and unwanted SiO2 layer 2 in the circumference is etched away. Next, phosphor glass layer 3 and CVD SiO2 layer 4 are superimposed in turn on the upper surface of substrate 1. Then, insulating layers 4, 3 and 2 are partially etched away to form a contact hole 6. Afterward, a tungsten layer 9 is laid by spattering and etching. Subsequently, a metal layer 10 consisting of a titan layer and a palladium layer is formed on it, and then a bump electrode 11 is formed on the metal layer 10. Then, etching the backside of substrate 1, a gold layer 12 and a silver layer 13 in turn are superimposed on the backside of substrate 1 to form an electrode.

Inventors

• 👤 Akihiro Sato
• 👤 Heiji Moroshima

Bibliographic Details