Manufacture of znsepn junction

Abstract

Abstract PURPOSE: To easily obtain a P-N junction by consisting Au as an acceptor in inactive gas wherein the Au is inducted into Z type ZnSe. CONSTITUTION: As a substrate, ZnSe single crystal obtained by temperature differential method liquidus growth controlled Se vapor pressure is used. Bi is intentionally poured in molten Zn to facilitate the following acceptor diffusion or P type in an alloy and heat treatment is applied at 800∼600°C. In including Sn of 5% is placed on the whole surface of the resulting N type crystal and Au is evaporated to the opposite surface. Next, ultrahigh purity Ar is flown into vacuum to maintain the condition at 350∼330°C for about three minutes and the Au is gradually cooled. In this way, forward rising becomes more than 20V when a P-N junction has been formed by consisting the Au as an acceptor and luminescence is performed by forward current. Therefore discrimination is made easy. The Au alloy or Ar gas prevents the evaporation of the Se from the crystal during diffusion and the Au alloy or the Ar gas plays a role preventing the expansion of the shift from stoichiometric composition. COPYRIGHT: (C)1982,JPO&Japio

Inventors

• 👤 Junichi Nishizawa
• 👤 Kazutomi Ito

Bibliographic Details