Memory device

Abstract

Abstract PURPOSE:To realize a large capacity and a high speed of a memory device formed by an element which is capable of making a current flow or not in accordance with the memory contents, by controlling the charge and discharge of digit line through a reverse amplifier, a feedback resistance, an IFGET, etc. CONSTITUTION:In case a memory cell MC of an addressed matrix array is non- conducting, an output of a reverse amplifier IV becomes an approximate value to voltage of an electric power supply CC, and a large current is supplied to a digit line DL through a feedback IGFETQF. As a result, the line DL is charged rapidly by a small time constant being in inverse proportion to an amplification factor A of the FETQF by the FETQF and a feedback resistance RF. Discharge of the line DL in case the cell MC being in conduction is executed rapidly in the same way. Accordingly, a large capacity and a high speed of a semiconductor memory device formed by a static memory cell group realized.

Inventors

• 👤 Eiji Sugimoto
• 👤 Takeshi Watanabe

Bibliographic Details